Nanocolumnar Preferentially Oriented PSZT Thin Films Deposited on Thermally Grown Silicon Dioxide

نویسندگان

  • S Sriram
  • M Bhaskaran
  • A Mitchell
  • DRG Mitchell
  • G Kostovski
چکیده

We report the first instance of deposition of preferentially oriented, nanocrystalline, and nanocolumnar strontium-doped lead zirconate titanate (PSZT) ferroelectric thin films directly on thermal silicon dioxide. No intermediate seed or activation layers were used between PSZT and silicon dioxide. The deposited thin films have been characterised using a combination of diffraction and microscopy techniques.

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

In situ investigation of thermally influenced phase transformations in (Pb 0.92 Sr 0.08)(Zr 0.65 Ti 0.35)O3 thin films using micro-Raman spectroscopy and X-ray diffraction.

Thin films of ferroelectric strontium-doped lead zirconate titanate [PSZT, (Pb(0.92)Sr(0.08))(Zr(0.65)Ti(0.35))O(3)] deposited by RF magnetron sputtering have been analyzed by in situ analysis techniques. The in situ techniques employed for this study include micro-Raman spectroscopy and X-ray diffraction (XRD), and variations in thin film structure and orientations for temperatures up to 350 d...

متن کامل

Preferentially oriented BaTiO3 thin films deposited on silicon with thin intermediate buffer layers

Barium titanate (BaTiO3) thin films are prepared by conventional 2-methoxy ethanol-based chemical solution deposition. We report highly c-axis-oriented BaTiO3 thin films grown on silicon substrates, coated with a lanthanum oxynitrate buffer layer of 8.9 nm. The influence of the intermediate buffer layer on the crystallization of BaTiO3 film is investigated. The annealing temperature and buffer ...

متن کامل

Thermal Oxidation Times Effect on Structural and Morphological Properties of Molybdenum Oxide Thin Films Grown on Quartz Substrates

Molybdenum oxide (α-MoO)thin films were prepared on quartz and silicon substrates by thermal oxidation of Mo thin films deposited using DC magnetron sputtering method. The influence of thermal oxidation times ranging from 60-240 min on the structural and morphological properties of the preparedfilms was investigated using X-ray diffraction, Atomic force microscopy and Fourier transform infrared...

متن کامل

A Study of ZnO Buffer Layer Effect on Physical Properties of ITO Thin Films Deposited on Different Substrates

The improvement of the physical properties of Indium Tin Oxide (ITO) layers is quite advantageous in photovoltaic applications. In this study the ITO film is deposited by RF sputtering onto p-type crystalline silicon (c-Si) with (100) orientation, multicrystalline silicon (mc-Si), and glass substrates coated with ZnO and annealed in vacuum furnace at 400°C. Electrical, optical, structural a...

متن کامل

The preparation and characterization of ultra-thin silicon dioxide films on a Mo( 110) surface

Ultra-thin silicon dioxide films have been deposited on an oxygen-covered Mo(ll0) surface at room temperature by evaporating silicon in an oxygen background (1 X 10W5 Torr). The growth mechanism and structural properties of the 50, films were characterized with temperature programmed desorption, Auger electron, electron energy loss, and infrared reflection-absorption spectroscopies. The interac...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

عنوان ژورنال:

دوره 4  شماره 

صفحات  -

تاریخ انتشار 2009